FDMS86200DC - N-Channel MOSFET

ON Semiconductor

FDMS86200DC Datasheet Preview — Preview of FDMS86200DC PDF

Datasheet Details

Part number	FDMS86200DC
Manufacturer	ON Semiconductor ↗
File Size	902.84 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200DC-ONSemiconductor.pdf

FDMS86200DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance.

Features

Shielded Gate MOSFET Technology.
DUAL COOL® Top Side Cooling DFN8 Package.
Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A.
Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A.
High Performance Technology for Extremely Low rDS(on).
100% UIL Tested.
RoHS Compliant.

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Published: Jan 11, 2020 |