Description
This N
Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Features
- rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A.
- rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A.
- High Performance Trench Technology for Extremely Low rDS(on).
- Low Gate Charge.
- High Power and Current Handling Capability.
- These Devices are Pb.
- Free and are RoHS Compliant.
