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UF3C120080K3S SiC Cascode JFET

UF3C120080K3S Description

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 80 mohm UF3C120080K3S .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

UF3C120080K3S Features

* Typical On-resistance RDS(on),typ of 80 mW
* Maximum Operating Temperature of 175 C
* Excellent Reverse Recovery
* Low Gate Charge
* Low Intrinsic Capacitance
* ESD Protected, HBM Class 2
* Very Low Switching Losses (required RC-snubber loss negligible under typical op

UF3C120080K3S Applications

* EV Charging
* PV Inverters
* Switch Mode Power Supplies
* Power Factor Correction Modules
* Motor Drives
* Induction Heating DATA SHEET www. onsemi. com 1 23 TO247-3 CASE 340AK MARKING DIAGRAM xxxxxxxxx AYYWWZZZ xxxxxxxxx = Specific Device Number A = Assembly Location Y

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SiC Cascode JFET ON Semiconductor
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