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STG50M120F3D7 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STG50M120F3D7
Manufacturer	STMicroelectronics ↗
File Size	238.73 KB
Description	IGBT
Datasheet	STG50M120F3D7-STMicroelectronics.pdf

STG50M120F3D7 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
10 μs of short-circuit withstand time.
Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.

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Published: Mar 7, 2023 |