STG50M120F3D7 Datasheet - STMicroelectronics

STG50M120F3D7, IGBT

STG50M120F3D7 Datasheet Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG50M120F3D7-STMicroelectronics.pdf

STG50M120F3D7 Datasheet Preview — Preview of STG50M120F3D7 PDF

Datasheet Details

Part number:

STG50M120F3D7

Manufacturer:

STMicroelectronics ↗

File Size:

238.73 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.7 V (typ. ) @ IC = 50 A
* Tight parameter distribution

Applications

* E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters

STG50M120F3D7 Distributors

📁 Related Datasheet

STG5682 STG2017 STG2454 STG2507 STG3155 STG3157

📌 All Tags

STG50M120F3D7 IGBT STMicroelectronics

STMicroelectronics STG50M120F3D7-like datasheet