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STG50M170F3D7

IGBT

STG50M170F3D7 Features

* Low VCE(sat) = 2 V (typ.) @ IC = 50 A

* 10 μs of short-circuit withstand time

* Minimized tail current

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient Applications E

* Industrial motor control EGCD

* Industrial

STG50M170F3D7 General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Further.

STG50M170F3D7 Datasheet (243.46 KB)

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Datasheet Details

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STG50M170F3D7 IGBT STMicroelectronics

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