STG50M170F3D7 IGBT

STMicroelectronics

Description

STG50M170F3D7 Datasheet Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Specifications

Part number: STG50M170F3D7
Manufacturer: STMicroelectronics ↗
File Size: 243.46 KB
Datasheet: STG50M170F3D7-STMicroelectronics.pdf
Description: IGBT

Features

* Low VCE(sat) = 2 V (typ. ) @ IC = 50 A
* 10 μs of short-circuit withstand time
* Minimized tail current
* Tight parameter distribution

Applications

* E
* Industrial motor control EGCD

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STG50M170F3D7 IGBT STMicroelectronics

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