STG50M170F3D7
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Igbt. This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IG
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STG50M120F3D7 - IGBT
(STMicroelectronics)
STG50M120F3D7
Datasheet
Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing
C G
Features
• Maximum junction temperature: TJ.
STG5123 - Low voltage 1 Ohm single SPDT switch
(STMicroelectronics)
..
STG5123
Low voltage 1 Ω single SPDT switch with break-before-make feature
Features
■
High speed: – tPD = 130 ps (typ.) at VCC = .
STG5223 - dual SPDT switch
(STMicroelectronics)
STG5223
Low voltage 0.5 Ω dual SPDT switch with break-before-make
Features
■ Ultra low power dissipation: .. ICC = 0.2 μA (max.) at T.
STG5592 - Low voltage high bandwidth quad SPDT switch
(STMicroelectronics)
STG5592
Datasheet
Low voltage high bandwidth quad SPDT switch
QFN16L (2.6x1.8 mm)
Maturity status link STG5592
Device summary
Order code
STG5592Q.
STG5678 - Low voltage dual SPDT switch
(STMicroelectronics)
STG5678
Low voltage dual SPDT switch with negative rail capability
Features
■ Distortion-free negative signal throughput down to VCC - 5.5 V
■ Wide o.
STG5682 - Low voltage dual SPDTswitch
(ST Microelectronics)
STG5682
Low voltage dual SPDTswitch with negative rail capacitance
Features
■ ■ ■ ■ ■ ■ ■ ■
Distortion-free negative signal throughput down to VCC-5..
STG5683 - Low voltage dual SPDTswitch
(STMicroelectronics)
..
STG5683
Low voltage dual SPDTswitch with negative rail capability
Features
■ ■ ■ ■ ■ ■ ■ ■
Distortion-free negative signal throu.
STG1 - N-channel Power MOSFET
(STMicroelectronics)
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
3 2 1
SOT.
STG1218 - a quad channel analog switch
(STMicroelectronics)
STG1218
Datasheet
Dual supply, quad SPDT switch, 1.8 V and 3.3 V logic input patible
Features
• Wide operating voltage range – Total voltage: 2.7 .
STG15M120F3D7 - IGBT
(STMicroelectronics)
STG15M120F3D7
Datasheet
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
C G
Features
• 10 µs of short-circuit withstand.