Datasheet4U Logo Datasheet4U.com

STS6409 P-Channel Enhancement Mode Field Effect Transistor

STS6409 Description

r re Pro STS6409 Ver 1.0 S a mHop Microelectronics C orp.P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω.

STS6409 Features

* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D SOT 26 Top View D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source V

📥 Download Datasheet

Preview of STS6409 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
STS6409
Manufacturer
SamHop Microelectronics
File Size
102.05 KB
Datasheet
STS6409-SamHopMicroelectronics.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

📁 Related Datasheet

  • STS65R190DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R190FS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R190L8AS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R190SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R190TS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R280DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R280FS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
  • STS65R280SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

📌 All Tags

P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
SamHop Microelectronics STS6409-like datasheet