* (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ.) (IC = 50 A) FWD : trr = 0.45 µs (typ.) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC =
GT50MR21 Datasheet (213.98 KB)
GT50MR21
Toshiba ↗ Semiconductor
213.98 KB
Silicon n-channel igbt.
GT50MR21
Discrete IGBTs Silicon N-Channel IGBT
GT50MR21
1. Applications
* Dedicated to Voltage-Resonant Inverter Switching Applications The p.
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