GT50MR21 Datasheet - Toshiba Semiconductor

GT50MR21, silicon N-channel IGBT

GT50MR21 Discrete IGBTs Silicon N-Channel IGBT GT50MR21 1.Applications * Dedicated to Voltage-Resonant Inverter Switching Applications The p.

Features

* (1) (2) (3) (4) 6.5th generation The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. Enhancement mode High-speed switching IGBT : tf = 0.18 µs (typ. ) (IC = 50 A) FWD : trr = 0.45 µs (typ. ) (IF = 15 A) (5) (6) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC =

GT50MR21-ToshibaSemiconductor.pdf