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SSM3J332R - Silicon P-Channel MOSFET

SSM3J332R Description

SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications * 1.8-V drive .

SSM3J332R Applications

* 1.8-V drive
* Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drai

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Silicon P-Channel MOSFET Toshiba Semiconductor
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