Datasheet Details
- Part number
- SSM3J334R
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 465.63 KB
- Datasheet
- SSM3J334R-ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
SSM3J334R Description
SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm * L.
SSM3J334R Applications
* Unit: mm
* Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGSS
± 20
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