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TPCP8303 Field Effect Transistor

TPCP8303 Description

TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPCP8303 Lithium Ion Battery Applications Notebook PC Applications Porta.

TPCP8303 Features

* ) ID max (Pulse)
* 10 t = 1 ms
* Drain current ID 10 ms
* 1
* Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
* 1
* 10 VDSS max
* 100
* 0.1
* 0.1 Drain
* source voltage VDS (V)

TPCP8303 Applications

* Notebook PC Applications Portable Equipment Applications
* Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ. ) High forward transfer admittance: |Yfs| = 12 S (typ. ) Low leakage current: IDSS =
* 10 μA (max) (VDS =
* 20 V) Enhancement mode: Vth =

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Field Effect Transistor Toshiba Semiconductor
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