UF3C120080K3S Datasheet - UnitedSiC

SiC MOSFET

UF3C120080K3S Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Typic

UF3C120080K3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSF.

UF3C120080K3S Datasheet (513.42 KB)

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Part number:

UF3C120080K3S

Manufacturer:

UnitedSiC

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513.42 KB

Description:

Sic mosfet.
DATASHEET UF3C120080K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C120080K3S Package TO-247-3L Marking UF3C120080K3S 1200V-80mW SiC FET .

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UF3C120080K3S Features

UF3C120080K3S General Description

Datasheet Details

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UF3C120080K3S Distributor