UF3C120080K3S SiC MOSFET

UnitedSiC

UF3C120080K3S Description

DATASHEET UF3C120080K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C120080K3S Package TO-247-3L Marking UF3C120080K3S 1200V-80mW SiC FET .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce.

UF3C120080K3S Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Typic

UF3C120080K3S Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080K3S Rev. A, December 2019 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Si

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Datasheet Details

Part number: UF3C120080K3S
Manufacturer: UnitedSiC
File Size: 513.42 KB
Datasheet: UF3C120080K3S-UnitedSiC.pdf
Description: SiC MOSFET

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