UF3C120150K4S Datasheet - UnitedSiC

UF3C120150K4S MOSFET

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery c.

UF3C120150K4S Features

* w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverte

UF3C120150K4S-UnitedSiC.pdf