UF3C120150K4S Datasheet (UnitedSiC)

UF3C120150K4S, MOSFET

United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery c

UF3C120150K4S Features

* w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverte