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WPM4801 - MOSFET

Description

The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • z-30V/-5.0A,RDS(ON)= 37mȍ@VGS= - 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS= - 4.5V zSuper high density cell design for extremely low RDS (ON) zExceptional on-resistance and maximum DC current capability zSOP.
  • 8P package design.

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Datasheet preview – WPM4801

Datasheet Details

Part number WPM4801
Manufacturer WillSEMI
File Size 806.53 KB
Description MOSFET
Datasheet download datasheet WPM4801 Datasheet
Additional preview pages of the WPM4801 datasheet.

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Full PDF Text Transcription

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WPM4801 P-Channel Enhancement Mode MOSFET Description The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . Features z-30V/-5.0A,RDS(ON)= 37mȍ@VGS= - 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS= - 4.
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