KIA 90A，30V N-CHANNEL MOSFET SEMICONDUCTORS S 1.
Matsuki
ME100N03T-G - N-Channel MOSFET
ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr.
CR Micro
CS100N03A4-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS100N03 A4-G General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi.
Matsuki
ME100N03T - N-Channel MOSFET
ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr.
Infineon Technologies
SPI100N03S2-03 - OptiMOS Power-Transistor
SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 .
Infineon Technologies
SPI100N03S2L-03 - OptiMOS Power-Transistor
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO2.
Infineon Technologies
SPI100N03S2-03 - OptiMOS Power-Transistor
www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD.
STMicroelectronics
STD100N03L - N-CHANNEL MOSFET
STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Packa.
STMicroelectronics
STD100N03L-1 - N-CHANNEL MOSFET
STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Packa.
GFD
100N03 - MOSFET
DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet.
SeCoS
SSPR100N03S-C - N-Channel Shielded Gate Trench Power MOSFET
Elektronische Bauelemente SSPR100N03S-C 100A, 30V, RDS(ON) 2.4mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C”.
NXP
PHB100N03LT - N-channel enhancement mode field-effect transistor
PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 M3D166 Product specification 1. Description N-channel enhan.
Infineon
BSC100N03LSG - Power-Transistor
BSC100N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to J.
Infineon
BSC100N03MSG - Power-Transistor
BSC100N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for H.
Huajing Microelectronics
CS100N03B4 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
Huajing Microelectronics
CS100N03FB9 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS100N03F B9 ○R General Description： CS100N03F B9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-.
Infineon Technologies
SPP100N03S2-03 - OptiMOS Power-Transistor
www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD.
Infineon Technologies
SPB100N03S2-03 - OptiMOS Power-Transistor
www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD.
Infineon Technologies
SPB100N03S2L-03 - OptiMOS Power-Transistor
www.DataSheet4U.com SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. .
Infineon Technologies
SPI100N03S2L-03 - OptiMOS Power-Transistor
www.DataSheet4U.com SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. .
Samwin
SWD100N03 - N-Channel MOSFET
www.DataSheet.co.kr SAMWIN SW100N03 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved .