100N03 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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Silicon N-Channel Power MOSFET CS100N03 B8 ○R General Description： CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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UNISONIC TECHNOLOGIES CO., LTD UT100N03 100A, 30V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220 The UT100N03 uses advanced trench technology to

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UNISONIC TECHNOLOGIES CO., LTD UT100N03-Q 100A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UT100N03-Q uses advanced trench technology

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Silicon N-Channel Power MOSFET ○R CS100N03 A4-G General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi

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Elektronische Bauelemente SSPR100N03S-C 100A, 30V, RDS(ON) 2.4mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C”

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SLD100N03T SLD100N03T 30V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology. This advan

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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Silicon N-Channel Power MOSFET CS100N03F B9 ○R General Description： CS100N03F B9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO2

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SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263

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SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO2

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www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD

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www.DataSheet4U.com SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.

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4V Drive Nch MOSFET RSH100N03 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface M

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www.vishay.com SQD100N03-3m2L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(

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www.vishay.com SQD100N03-3m4 Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A

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