100N03 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanet

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MOT100N03MC/D N-CHANNEL MOSFET „ MOT100N03MC/D PRODUCT CHARACTERISTICS VDSS RDS(ON)-Max 30 4.5at VGS=10V V mΩ Symbol 2.Drain RDS(ON)-Max 7.2 at

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STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Packa

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MT100N03F MT100N03F MT100N03F PDFN5*6-8L Shenzhen Meitai Microelectronics Co., Ltd WWW.MTWDZ.CN MT100N03F Shenzhen Meitai Microelectronics Co., L

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PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 M3D166 Product specification 1. Description N-channel enhan

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Silicon N-Channel Power MOSFET ○R CS100N03 A4-G General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi

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Description AP100N03BD 30V N-Channel Enhancement Mode MOSFET The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate c

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SLM100N03T SLM100N03T 30V N -Channel MOSFET LEAD FREE Pb RoHS General Description This Power MOSFET is produced using Maple semi‘s advanced planar

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sales.Mr.wang13826508770 www.sztssd.com Description AP100N03D 30V N-Channel Enhancement Mode MOSFET The AP100N03D uses advanced trench technology t

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HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) wit

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BSC100N03LS G OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to J

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Silicon N-Channel Power MOSFET CS100N03 B8 ○R General Description： CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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BR100N03 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge,

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MOT100N03MC/D N-CHANNEL MOSFET „ MOT100N03MC/D PRODUCT CHARACTERISTICS VDSS RDS(ON)-Max 30 4.5at VGS=10V V mΩ Symbol 2.Drain RDS(ON)-Max 7.2 at

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Silicon N-Channel Power MOSFET ○R CS100N03 B8-1 General Description： CS100N03 B8-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr

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ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME100N03T-G is the N-Channel logic enhancement mode power field effect tr

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