IXFX21N100Q (IXYS)
HiPerFET Power MOSFET
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HiPerFET TM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbo
(29 views)
IXTT1N100 (IXYS Corporation)
High-Voltage MOSFET
Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTH 1N100 IXTT 1N100
V DSS
ID25
RDS(on)
= 100
(26 views)
IXFX21N100F (IXYS Corporation)
Power MOSFET
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt
(25 views)
MTP1N100E (ON Semiconductor)
Power Field Effect Transistor
MTP1N100E
Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect
Transistor
High−Performance Silicon−Gate CMOS
This high voltage MOSFET uses an advan
(25 views)
IXTN21N100 (IXYS Corporation)
High Voltage MegaMOSTMFETs
High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55 Ω
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol V
(24 views)
MTP1N100 (Motorola)
Power MOSFET
(23 views)
MTP1N100E (Motorola)
TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP1N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP1N1
(23 views)
MTM1N100 (Motorola)
Power MOSFET
(20 views)
IXTP01N100D (IXYS Corporation)
N-Channel MOSFET
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Co
(20 views)
IXFR21N100Q (IXYS Corporation)
HiPerFETTM Power MOSFETs
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family
Pre
(19 views)
IXTH1N100 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1000V(Min) ·Static Drain-Source On-Resistance
(19 views)
IXTA1N100 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 11Ω@VGS=10V ·Fully characterized avalanche voltage and curren
(19 views)
MTB1N100E (Motorola)
TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB1N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
De
(17 views)
IXFK21N100Q (IXYS)
HiPerFET Power MOSFET
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HiPerFET TM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Symbo
(17 views)
IXTP1N100P (INCHANGE)
TO-252 N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and curren
(17 views)
RL1N1000F (Rectron Semiconductor)
PHOTOFLASH RECTIFIER (VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RL1N1000F THRU RL1N1800F
PHOTOFLASH RECTIFIER
VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere
FEA
(16 views)
IXTY01N100 (IXYS Corporation)
Power MOSFET
High Voltage Power MOSFET
IXTU01N100 IXTY01N100
VDSS =
ID25 = RDS(on)
1000V 100mA 80
N-Channel Enhancement Mode
TO-251 (IXTU)
Symbol
VDSS VDG
(16 views)
IXTY01N100D (IXYS Corporation)
N-Channel MOSFET
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Co
(16 views)
IXTU01N100D (IXYS Corporation)
N-Channel MOSFET
Depletion Mode MOSFET
N-Channel
IXTY01N100D IXTU01N100D IXTP01N100D
D
G S
Symbol VDSX VDGX VGSX VGSM IDM PD
TJ TJM Tstg TL TSOLD Md Weight
Test Co
(16 views)
IXTY1N100P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1N100P IXTA1N100P IXTP1N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD
(16 views)
