1N100 Datasheet | Specifications & PDF Download

Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co

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High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG

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Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co

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Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 100

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isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltag

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HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFN 21N100Q Symbol VDSS VDGR VGS

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance

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2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 www.DataSheet4U.com MSAFA1N100D Fast MOSFET Die for Implantable

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY1N100P IXTA1N100P IXTP1N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and curren

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High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG

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MTP1N100E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advan

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Silicon N-Channel Power MOSFET ○R CS01N100 A4R General Description： CS01N100 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100

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