25N06 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V , M2, TO-247-3L NTHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @

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HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L NVBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 1

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch

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Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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HYG025N06LS2P/B Single N-Channel Enhancement Mode MOSFET Feature  60V/145A RDS(ON)= 2.8 mΩ (typ.) @ VGS = 10V RDS(ON)= 4.1 mΩ (typ.) @ VGS = 4.5V 

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HYG025N06LS1P/B Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.) @ VGS = 4.5V 

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem

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HYG025N06LS2C2 Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.3 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.5 mΩ (typ.) @ VGS = 4.5V 

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistors are produced using

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HYG025N06LS1P Single N-Channel Enhancement Mode MOSFET Feature  60V/160A RDS(ON)= 2.5 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.7 mΩ (typ.) @ VGS = 4.5V  1

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HYG025N06LS2P/B Single N-Channel Enhancement Mode MOSFET Feature  60V/145A RDS(ON)= 2.8 mΩ (typ.) @ VGS = 10V RDS(ON)= 4.1 mΩ (typ.) @ VGS = 4.5V 

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