25N06 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-ch

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HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

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UMW R UMW 25N06 60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design

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Silicon N-Channel Power MOSFET CS25N06 B8 ○R General Description： CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @

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FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features • RDS(on) = 1.9mΩ ( Typ.) @

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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem

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Silicon N-Channel Power MOSFET CS25N06 B3 ○R General Description： CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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www.DataSheet4U.com IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode

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www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s s s s s s s V DSS 60 V 60 V

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Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m

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SFD25N06BT Product Description Silicon N-Channel MOSFET Features • 60V, 25A • RDS(ON) =32mΩ (Max.) @ VGS = 10V, ID = 10A • 100% EAS Guaranteed • Gree

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW

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FDP025N06 — N-Channel PowerTrench® MOSFET FDP025N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.5 mΩ November 2013 Features • RDS(on) = 1.9 mΩ (Ty

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www.DataSheet4U.com IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode

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www.DataSheet4U.com IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC

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Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L NVBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 1

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