25N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD025N06N, IIPD025N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanch

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GT025N06AT N-Channel Enhancement Mode Power MOSFET Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gat

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Types 380L, 382L, 380LX & 382LX, 85 ЊC High-Capacitance Snap-In Types 380L/LX & 4-pin Mount 382LX (85 °C) The excellent value of Type 380L/LX capacito

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW

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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPD025N06N Data Sheet Rev. 2.5 Final Power Managem

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GT025N06AD5 N-Channel Enhancement Mode Power MOSFET Description The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low g

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Description The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variet

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Description The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured

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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured

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RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufact

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Silicon N-Channel Power MOSFET CS25N06 B4 ○R General Description： CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET CS25N06 B8 ○R General Description： CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 28mΩ ID 30A G UIS, Rg 100% Tested

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www.DataSheet4U.com IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode

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UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR „ DESCRIPTION The UTC 25N06 is an N-ch

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Type 381LX / 383LX 105 °C High Ripple, Snap-In Aluminum High Ripple, Long Life, 2, 4 and 5 pin styles available Specifications Temperature Range Rate

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @

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