INCHANGE Semiconductor isc N-Channel MOSFET Transi.
CS25N06B8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS25N06 B8 ○R General Description: CS25N06 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.NVHL025N065SC1 - SiC MOSFET
MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @.HYG025N06LS1D - N-Channel Power MOSFET
HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.CS25N06C4 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS25N06 C4 General Description: CS25N06 C4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens.FDI025N06 - MOSFET
FDI025N06 N-Channel PowerTrench® MOSFET June 2008 FDI025N06 N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ tm Features • RDS(on) = 1.9mΩ ( Typ.) @.RFP25N06 - N-Channel Power MOSFETs
RFP25N06, RF1S25N06SM Data Sheet July 1999 File Number 1492.4 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufact.CS25N06B3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS25N06 B3 ○R General Description: CS25N06 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.CS25N06B4 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS25N06 B4 ○R General Description: CS25N06 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.EMB25N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 28mΩ ID 30A G UIS, Rg 100% Tested .IPB25N06S3-25 - Power-Transistor
www.DataSheet4U.com IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC .25N06 - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR DESCRIPTION The UTC 25N06 is an N-ch.NTBG025N065SC1 - SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 m.CS25N06C3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS25N06 C3 General Description: CS25N06 C3 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens.NVH4L025N065SC1 - N-Channel MOSFET
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99 A NVH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW .PHB125N06LT - TrenchMOS transistor Logic level FET
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-.25N06 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N06 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag.SPD25N06S2-40 - OptiMOS Power-Transistor
SPD25N06S2-40 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 40 29 P- TO252 -3-11 V mΩ A • Enhancement mode • 175.STP25N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s s s s s s s V DSS 60 V 60 V .IPB25N06S3L-22 - Power-Transistor
www.DataSheet4U.com IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode .IPP25N06S3L-22 - Power-Transistor
www.DataSheet4U.com IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode .