25N60 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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STG3P3M25N60 3 Phase inverter IGBT - SEMITOP®3 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 600V VCE(sat)(Max) @ IC=7A,

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FCI25N60N — N-Channel SupreMOS® MOSFET FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Features • RDS(on) = 107 mΩ (Typ.) @

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FCH125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 Feature

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www.vishay.com SiHG25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge PRODUCT SUMMARY VDS (V) at TJ max. RDS

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SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY25N

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www.DataSheet.co.kr FCH25N60N N-Channel MOSFET FCH25N60N Features SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The S

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FCP125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCP125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 Feature

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www.vishay.com SiHA25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge Thin-Lead TO-220 FULLPAK D G G DS S

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FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features • RDS(on) = 108 mΩ (Typ.) @ V

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MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(O

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MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 29 A, 125 mW FCH125N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltag

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SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan spee

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features • RDS(on) = 107 mΩ (Typ.)@ VGS =

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STF25N60M2-EP N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Datasheet - production data 3 12 TO-220FP Figure

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