25N60 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltag

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY25N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY25N

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FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features • RDS(on) = 108 mΩ (Typ.) @ V

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SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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FCH125N60E — N-Channel SuperFET® II Easy-Drive MOSFET FCH125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ November 2015 Feature

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www.vishay.com SiHK125N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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MOSFET – N-Channel, SUPERFET) II, Easy-Drive 600 V, 29 A, 125 mW FCH125N60E Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltag

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STL25N60M2-EP N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features Or

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UNISONIC TECHNOLOGIES CO., LTD UPG25N60 Insulated Gate Bipolar Transistor 600V, SMPS N-CHANNEL IGBT  DESCRIPTION The UTC UPG25N60 is a N-channel

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isc N-Channel MOSFET Transistor TK25N60X5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.14Ω. ·Enhancement mode: Vth =3.0 to 4.5V (VDS = 10 V

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www.vishay.com SiHA25N60EFL Vishay Siliconix E Series Power MOSFET with Fast Body Diode and Low Gate Charge Thin-Lead TO-220 FULLPAK D G G DS S

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www.DataSheet.co.kr FCH25N60N N-Channel MOSFET FCH25N60N Features SupreMOS® January 2011 tm N-Channel MOSFET 600V, 25A, 0.126Ω Description The S

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FCI25N60N — N-Channel SupreMOS® MOSFET FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ November 2013 Features • RDS(on) = 107 mΩ (Typ.) @

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FCI25N60N_F102 N-Channel MOSFET March 2013 FCI25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features • RDS(on) = 107 mΩ (Typ.)@ VGS =

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SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan spee

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() CRJW125N60G2F SJMOS N-MOSFET 600V, 95mΩ, 27A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency

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