UNISONIC TECHNOLOGIES CO., LTD 2N120 2.0A, 1200V N.
STMicroelectronics
STF12N120K5 - N-CHANNEL POWER MOSFET
STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Fe.
IXYS
IXYN82N120C3 - IGBT
1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN82N120C3 VCES = IC110 = V ≤CE(sat) tfi(typ) .
ON
MGW12N120D - Insulated Gate Bipolar Transistor with Anti-Parallel Diode
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D.
Infineon Technologies AG
GB02N120 - SGB02N120
www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta.
IXYS Corporation
IXFN32N120P - Polar HiPerFET Power MOSFET
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ .
IXYS
IXYN82N120C3H1 - High-Speed IGBT
1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 46A 3.2V 93ns .
IXYS
IXGY2N120 - High Voltage IGBT
Preliminary Data Sheet High Voltage IGBT IXGY 2N120 VCES 1200 V IC90 2.0 A VCE(SAT) 3V Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ =.
IXYS
IXTH12N120 - Power MOSFET
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio.
STMicroelectronics
STH12N120K5-2 - N-CHANNEL Power MOSFET
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247.
STMicroelectronics
STP12N120K5 - N-CHANNEL Power MOS MOSFET
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247.
STMicroelectronics
STW12N120K5 - N-CHANNEL Power MOS MOSFET
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247.
STMicroelectronics
STWA12N120K5 - N-CHANNEL Power MOS MOSFET
STH12N120K5-2, STP12N120K5, STW12N120K5, STWA12N120K5 N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247.
SSDI
2N1209 - NPN Transistor
5 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mh.
Infineon
SGI02N120 - Fast IGBT in NPT-technology
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • .
Intersil Corporation
HGT1S2N120BNDS - 12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The .
Intersil Corporation
HGT1S2N120BNS - 12A/ 1200V/ NPT Series N-Channel IGBT
HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS Data Sheet January 2000 File Number 4696.2 12A, 1200V, NPT Series N-Channel IGBT The HGTP2N120BN, HGTD2N120B.
Fairchild Semiconductor
HGT1S2N120CN - 13A/ 1200V/ NPT Series N-Channel IGBT
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120.
