2N120 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L NVBG022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L V(BR)DSS 1200 V RDS(ON) MAX 30 mW @ 18 V D ID M

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES I C110 VCE(sat)

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1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYN82N120C3H1 VCES = 1200V IC110 = 46A V CE(sat)  3.2V tfi(typ)

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GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol V

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Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN82N120C3H1 VCES IC110 VCE(sat) = 1200V =

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

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www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre

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Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditio

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HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Th

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HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si

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Advance Technical Information 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYH82N120C3 VCES IC110 VCE(sat) tfi(typ) = = ≤ =

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

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SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

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IGBT Optimized for switching up to 5KHz Preliminary data sheet IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V = 24 A IC25 VCE(sat) = 3.0 V Symbol VCES V

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