8N65 Datasheet | Specifications & PDF Download

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Stati

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packa

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Silicon N-Channel Power MOSFET CS8N65 ARR ○R General Description： CS8N65 ARR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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BRF8N65(CS8N65F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch

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NCE08N65D,NCE08N65,NCE08N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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GaN Enhancement-mode Power Transistor CID18N65D Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

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HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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UNISONIC TECHNOLOGIES CO., LTD 8N65 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designe

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UNISONIC TECHNOLOGIES CO., LTD 18N65 18A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS

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SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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HFS8N65S-VB HFS8N65S-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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NCE08N65D,NCE08N65,NCE08N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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