8N65 Datasheet | Specifications & PDF Download

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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UNISONIC TECHNOLOGIES CO., LTD 8N65 8A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designe

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Silan Microelectronics SVF18N65F/T/PN_Datasheet 18A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF18N65F/T/PN is an N-channel enhancement mode

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TSF8N65M-VB TSF8N65M-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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JCS8N65FB-VB JCS8N65FB-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.

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Silan Microelectronics SVF18N65F/T/PN_Datasheet 18A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF18N65F/T/PN is an N-channel enhancement mode

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HFS8N65S-VB HFS8N65S-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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Silan Microelectronics SVF18N65F/T/PN_Datasheet 18A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF18N65F/T/PN is an N-channel enhancement mode

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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packa

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Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK068N65Z5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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STL18N65M5 Datasheet N-channel 650 V, 215 mΩ typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 5x6 HV package 1 2 3 4 PowerFLAT 5x6 HV D(5, 6, 7, 8)

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SLP8N65C / SLF8N65C SLP8N65C/SLF8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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