8N65 Datasheet | Specifications & PDF Download

Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.4Ω@VGS = 10V. Pb  Ultra Low gate charge (typica

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM

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HFS8N65S-VB HFS8N65S-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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GPT08N65 / GPT08N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65 ·FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Stati

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isc N-Channel MOSFET Transistor IXFA8N65X2 ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VG

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VGS=10V ·Fully

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 450mΩ@VGS=10V ·Fully

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STB28N65M2, STF28N65M2, STP28N65M2, STW28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packa

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Silicon N-Channel Power MOSFET CS8N65 ARR ○R General Description： CS8N65 ARR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :

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HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and desi

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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE  8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A

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X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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