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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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RTV31, RTV60, RTV88 Technical Data Sheet Silicone Rubber Compounds for High Temperature Product Description RTV31, RTV60 and RTV88 silicone rubber

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Preliminary Data Sheet • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Sou

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Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datasheet http://www.datasheetlist.com/ Free Datashe

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LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability October 2003 LM5110 Dual 5A Compound Gate Driver with Negative Output Vo

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КТ8232 А, Б. N-P-N КРЕМНИЕВЫЙ ВЫСОКОВОЛЬТНЫЙ МОЩ НЫЙ СОСТАВНОЙ ТРАНЗИСТОР Предназначендляприменениявпереключающихиимпульсныхсхемах. Идеально подходит

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UNISONIC TECHNOLOGIES CO., LTD DTNN143Z COMPOUND TRANSISTORS DUAL TRANSISTOR  DESCRIPTION The UTC DTNN143Z is an NPN epitaxial transistor; it uses

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HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE

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www.DataSheet4U.com DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY µPA1550 N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING µPA1550 is a N-channel ve

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www.DataSheet4U.com Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without pri

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PACKAGED 2W POWER PHEMT • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP300

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Filtronic Solid State Features • • • • • • • • • • 2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return

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Filtronic Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Freque

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DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chi

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NTE424 Non−Silicone Thermal Compound 1 oz. Plunger Tube Description: NTE424 heat sink compound is a grease−like, non−silicone, non−migrating material

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FPD750 0.5W POWER PHEMT FEATURES: • • • • • 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 d

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