EPC20 Datasheet | Specifications & PDF Download

eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2036 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 73 mΩ ID , 1.7 A D G S EPC2036 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A NEW PRODUCT EPC2001 EFFICIENT POWER CONVERSI

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eGaN® FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mW ID , 10 A NEW PRODUCT EPC2014 EFFICIENT POWER CONVERSI

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eGaN® FET DATASHEET EPC2024 EPC2024 – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 1.5 mΩ ID , 90 A D G S Gallium Nitride’s exceptional

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eGaN® FET DATASHEET EPC2088 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.2 mΩ max ID , 60 A D G S EPC2088 EFFICIENT POWER CONVERSIO

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68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 D

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eGaN® FET DATASHEET EPC2045 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 16 A D G S EPC2045 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2052 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ID , 8.2 A D G S EPC2052 EFFICIENT POWER CONVERSION

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eGaN® FET DATASHEET EPC2053 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ ID , 48 A D G S EPC2053 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2035 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 45 mΩ ID , 1.7 A D G S EPC2035 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2034 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 10 mΩ ID , 48 A D G S EPC2034 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2033 – Enhancement Mode Power Transistor VDS , 150 V RDS(on) , 7 mΩ ID , 48 A D G S EPC2033 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2031 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 2.6 mΩ ID , 48 A D G S EPC2031 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2032 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 4 mΩ ID , 48 A D G S EPC2032 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EPC2029 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mW ID , 11 A NEW PRODUCT EPC2016 EFFICIENT POWER CONVERS

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eGaN® FET DATASHEET EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode VDS , 100 V RDS(on) , 3300 mΩ ID , 0.5 A

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eGaN® FET DATASHEET EPC2040 – Enhancement Mode Power Transistor VDS , 15 V RDS(on) , 30 mΩ ID , 3.4 A D G S EPC2040 EFFICIENT POWER CONVERSION HAL

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