EPC20 Datasheet | Specifications & PDF Download

68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 D

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eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2036 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 73 mΩ ID , 1.7 A D G S EPC2036 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2001C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 36 A D G S EPC2001C EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2022 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A D G S EPC2022 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EPC2029 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 16 mW ID , 10 A NEW PRODUCT EPC2014 EFFICIENT POWER CONVERSI

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eGaN® FET DATASHEET EPC2052 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ID , 8.2 A D G S EPC2052 EFFICIENT POWER CONVERSION

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eGaN® FET DATASHEET EPC2053 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ ID , 48 A D G S EPC2053 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2034 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 10 mΩ ID , 48 A D G S EPC2034 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mW ID , 11 A NEW PRODUCT EPC2016 EFFICIENT POWER CONVERS

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eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION

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eGaN® FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EPC2007 EFFICIENT POWER CONVERSI

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eGaN® FET DATASHEET EPC2015 – Enhancement Mode Power Transistor VDSS , 40 V RDS(ON) , 4 mW ID , 33 A NEW PRODUCT EPC2015 EFFICIENT POWER CONVERSIO

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eGaN® FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CONVERS

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eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERSION

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EPC2049 – Enhancement-Mode Power Transistor Preliminary Specification Sheet Status: Engineering Features: • VDS, 40 V • Maximum RDS(on), 5 mΩ • ID, 16

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EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 30 V • Maximum RDS(ON), 1.3 mΩ • ID, 60 A • Pb-Free (RoH

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eGaN® FET DATASHEET EPC2055 – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 3.6 mΩ ID , 29 A D G S EPC2055 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2045 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 16 A D G S EPC2045 EFFICIENT POWER CONVERSION HAL

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