GP406 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI

Rating: 1 ★ (7 votes)

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT

Rating: 1 ★ (6 votes)

www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI

Rating: 1 ★ (4 votes)

PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw

Rating: 1 ★ (4 votes)

PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw

Rating: 1 ★ (4 votes)

PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem

Rating: 1 ★ (4 votes)

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF Features • Low VCE (ON) Trench IGBT Te

Rating: 1 ★ (4 votes)

IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • L

Rating: 1 ★ (3 votes)

PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Tem

Rating: 1 ★ (3 votes)

  IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V   IC = 60A, TC =100°C tSC 5µs, TJ(

Rating: 1 ★ (3 votes)

AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technolo

Rating: 1 ★ (3 votes)

AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technolo

Rating: 1 ★ (3 votes)

DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPPD-400-1B 4 AM

Rating: 1 ★ (3 votes)

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG

Rating: 1 ★ (3 votes)

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS s

Rating: 1 ★ (3 votes)

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS s

Rating: 1 ★ (3 votes)

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF Features • Low VCE (ON) Trench IGBT Te

Rating: 1 ★ (3 votes)

AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT

Rating: 1 ★ (3 votes)

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG

Rating: 1 ★ (2 votes)

IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l

Rating: 1 ★ (2 votes)