DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit .
International Rectifier
18
IRGP4068D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI.
International Rectifier
14
IRGP4063DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • L.
International Rectifier
13
IRGP4062D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.
International Rectifier
5
IRGP4068DPBF - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLI.
International Rectifier
5
IRGP4066D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97576 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Sw.
International Rectifier
5
IRGP4063D1PBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 60A, TC =100°C tSC 5µs, TJ(.
International Rectifier
5
IRGP4069D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4069D-EPbF Features • Low VCE (ON) Trench IGBT Te.
International Rectifier
4
IRGP4062DPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IG.
International Rectifier
3
IRGP4063-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction tem.
International Rectifier
3
AUIRGP4066D1 - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technolo.
International Rectifier
3
IRGP4063D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT.
Infineon
3
AUIRGP4062D-E - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Trench IGBT.
International Rectifier
2
IRGP4065PBF - PDP TRENCH IGBT
IRGP4065PbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l .
International Rectifier
2
IRGP4066-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Tem.
International Rectifier
2
AUIRGP4066D1-E - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technolo.
DIOTEC
2
GP406 - 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. GPPD-400-1B 4 AM.
International Rectifier
2
AUIRGP4063D - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE AUIRGP4063D AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (ON) Trench.
International Rectifier
2
IRGP4062-EPBF - INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS s.
International Rectifier
2
IRGP4069PbF - INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS s.
International Rectifier
1
IRGP4065DPBF - PDP TRENCH IGBT
IRGP4065DPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l.