GaN-SiC Datasheet | Specifications & PDF Download

GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom®

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TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on S

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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WS1A3640 GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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WS1A2639 GaN on SiC Power Amplifier Module for 5G Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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WS1A2639 GaN on SiC Power Amplifier Module for 5G Description The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-

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GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high

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www.DataSheet4U.com Product Guide D_1111C Series, Ultra Compact InGaN/SiC SMT LED s Features • High brightness (InGaN/SiC) die material • Available

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Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC -

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