GaN-SiC Datasheet | Specifications & PDF Download

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE

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WS1A3640 GaN on SiC Power Amplifier Module for 5G Description The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspee

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GaN on SiC Transistor, 9 W, 28 V DC – 8 GHz Features • Saturated Power: 9 W • Drain Efficiency: 55 % • Small Signal Gain: 14 dB • Lead-Free Air Cavit

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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ACPL-P347 and ACPL-W347 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The ACPL-P347/W

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GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom®

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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ACPL-P347 and ACPL-W347 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The ACPL-P347/W

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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GTRB204402FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 48 V, 1930 – 2020 MHz Description The GTRB204402FC/1 is a 350-watt (P3dB) GaN o

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ACPL-352J 5.0 Amp Output Current IGBT and SiC/GaN MOSFET Gate Drive Optocoupler with Integrated Overcurrent Sensing, FAULT, GATE, and UVLO Status Feed

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GTRA374902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz Description The GTRA374902FC is a 450-watt (P3dB) GaN on Si

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GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Description The GTVA212701FA is a 270-watt GaN on SiC high

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca

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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom®

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