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IXYS Corporation
40N60 - IXSH40N60
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi.
IXYS Corporation
25N120 - IXGH25N120
www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES.
IXYS Corporation
IXGH60N60 - Ultra-Low VCE(sat) IGBT
Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I.
IXYS Corporation
60N60 - IGBT
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM.
IXYS Corporation
IXGH40N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A VCES 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
IXYS Corporation
IXTK62N25 - Power MOSFET
High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 62N25 VDSS = ID25 = = RDS(on) 250 V 62 A 35 mΩ Symbol Test con.
IXYS Corporation
IXTQ82N25P - Power MOSFET
PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS.
IXYS Corporation
40N120 - IXEH40N120
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C.
IXYS Corporation
IXDH20N120D1 - High Voltage IGBT
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.
IXYS Corporation
IXFH24N50 - Power MOSFET
HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE:.
IXYS Corporation
IXGR40N60C2D1 - C2-Class High Speed IGBTs
HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data.
IXYS Corporation
IXGH60N60C2 - High Speed IGBT
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600.
IXYS Corporation
IXTQ69N30P - Power MOSFET
PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol .
IXYS Corporation
100N055 - Power MOSFET
www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID2.
IXYS Corporation
CS19-12HO1 - Phase Control Thyristors
CS 19 Phase Control Thyristors VRRM = 800-1200 V IT(RMS) = 29 A IT(AV)M = 19 A VRSM www.DataSheet4U.com VDSM V 800 1200 VRRM VDRM V 800 1200 Type.
IXYS Corporation
80N60A - IGBT
Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V .
IXYS Corporation
IXGH48N60C3 - GenX3 600V IGBT
GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 = .
IXYS Corporation
IXGI48N60C3 - GenX3 600V IGBT
GenX3TM 600V IGBT High-Speed PT IGBTs for 40-100kHz Switching IXGI48N60C3* IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 *Obsolete Part Number VCES = IC110 = .
IXYS Corporation
IXTK82N25P - Power MOSFET
PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS.