IXYS Corporation Datasheet | Specifications & PDF Download

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO

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Power MOSFET ISOPLUS220TM IXTC 13N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V

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PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS

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Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sa

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Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V =

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13 N50 IXFM 13 N50 VDSS ID (cont) RDS(on) trr = 500 V

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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HiPerFETTM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol VDSS VDGR VGSS VGSM

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM42N20 IXFM50N20 IXFH/IXFM42N20 IXFH/IXFM/IXFT50

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VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Symbol www.DataSheet4U.co

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Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH400N075T2 IXFT4

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www.DataSheet.co.kr GenX3TM 1400V IGBTs w/ Diode Avalanche Rated IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 VCES = 1400V IC110 = 28A VCE(sat) ≤ 3

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T N-Channel Enhancement Mode Avalanche Rated VDSS = 75 ID25 = 55 R

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Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS V

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