IXYS Corporation Datasheet | Specifications & PDF Download

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM

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GenX3TM 600V IGBTs Ultra Low Vsat PT IGBTs for up to 5kHz switching IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SS

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PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS

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ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V =

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www.DataSheet4U.com VCES Low VCE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol VCES VCGR VGES

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www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID2

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Fast Recovery Epitaxial Diode (FRED) Part number DSEI2x121-02A DSEI2x121-02A IFAVM = 2x 123 A VRRM = 200 V trr = 35 ns E72873 Features / Advantages:

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM 14 Ampere Low-Side Ultrafast MOSFET Drivers Features • Bui

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www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600

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TM www.DataSheet4U.com HiPerFET Power MOSFETs VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated,

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst

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MDD 312 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type 3 1

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions

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Ultra-Low VCE(sat) IGBT www.datasheet4u.com IXGH 60N60 IXGK 60N60 IXGT 60N60 VCES = 600 V IC25 = 75 A VCE(sat) = 1.7 V Symbol VCES VCGR VGES VGEM I

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PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol

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FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A 21 34 DSEI2x101-06A VRRM I FAV t rr = 600 V =

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Standard Rectifier Module 3~ Rectifier Bridge Part number VUO52-16NO1 4/5 6 8 10 1/2 VUO52-16NO1 3~ Rectifier VRRM = I DAV = I FSM = 1600 V 60

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DSEP 60-06A DSEP 60-06AT HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type A C IFA

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PRELIMINARY DATA SHEET IXDD404PI / 404SI / 404SIA / 404SI-16 4 Amp Dual Low-Side Ultrafast MOSFET Driver Features • Built using the advantages and co

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