P-MOSFET Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630

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TDA7851F 4 x 48 W MOSFET quad bridge power amplifier Datasheet - production data ' 0'03  Flexiwatt25 (Horizontal) ' 0'03  Flexiwatt25 (Ver

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XP15NA9R3CXT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Low On-resistance ▼

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ITA13N50R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 500V Lead Free Package and Finish RDS(ON)(Typ.) 0.4Ω ID 13A Features: ●

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IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d

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WPM6207 Single P-Channel, -20V, -5.7A, Power MOSFET VDS (V) -20 Max Rds(on) (mΩ) 30@ VGS=–4.5V 40@ VGS=–2.5V 60@ VGS=–1.8V Descriptions The WPM620

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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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