RF73 Datasheet | Specifications & PDF Download

PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional d

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www.vishay.com IRF730 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF730 / HIRF730F N-CHA

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  AUTOMOTIVE GRADE AUIRF7303Q Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic

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lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿAvailable in Tape & Reel lÿ Lead-Free VDSS -30V PD - 95196A IRF7328PbF

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PD - 95181 IRF7314PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Fre

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PD - 96107A IRF7314QPbF Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ

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www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Techno

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Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF730 RoHS-compliant Product N-CHA

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IRF730 Data Sheet July 1999 File Number 1580.5 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power

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l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperatu

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SEMICONDUCTOR IRF730 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (5.5A, 400Volts) DESCRIPTION The Nell IRF730 are N-Channel enh

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l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l

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Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig

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PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic d

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SMD Type HEXFET Power MOSFET KRF7309 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Availa

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PD- 94101A IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applica

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 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast S

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