SS30 Datasheet | Specifications & PDF Download

www.vishay.com SiSS30ADN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT S

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Application 1SS300 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) =

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www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward

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PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1. General description NPN low VCEsat transistor in a SOT223 (SC-

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XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpo

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LED Steplight 4.5 Width Integral 120V Driver Fixture • Cree XP-E LEDs 2850°K ±100°K, 80 CRI, 120 lm • Integral 120V input driver • Diecast aluminu

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Sma

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www.DataSheet4U.com NSS30201MR6T1G 30 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

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Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast re

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SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF(3) = 0.92 V(Typ) Fast reverse rec

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www.DataSheet4U.com NSS30101LT1G 30 V, 2 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniat

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PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN l

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www.DataSheet.co.kr SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS302 Features Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse re

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FEATURES/BENEFITS 2 www.honeywell.com/sensing Honeywell Sensing and Control 3 4 www.honeywell.com/sensing Honeywell Sensing and Control 5 Sensi

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www.DataSheet4U.com NSS30071MR6T1G 30 V, 0.7 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mi

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Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA

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