AO8832 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

AO8832 Datasheet Preview — Preview of AO8832 PDF

Datasheet Details

Part number	AO8832
Manufacturer	Alpha & Omega Semiconductors
File Size	165.34 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8832_AlphaOmegaSemiconductors.pdf

AO8832 Product details

Description

The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 31mΩ (VGS = 3.6V) RDS(ON) < 39mΩ (VGS = 2.5V) D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

AO8830 - Dual N-Channel MOSFET
AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
AO8808 - Dual N-Channel Enhancement Mode Field Effect Transistor
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Published: Aug 29, 2009 |