AO8830 - Dual N-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8830
Manufacturer	Alpha & Omega Semiconductors
File Size	142.74 KB
Description	Dual N-Channel MOSFET
Datasheet	AO8830 Datasheet
Additional preview pages of the AO8830 datasheet.

Product details

Description

The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum 20 ±12 6 4.8 30 1.5 0.94.

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Other Datasheets by Alpha & Omega Semiconductors

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Published: Dec 20, 2006 |