F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

Elite Semiconductor

F59D4G81A Description

ESMT Flash .
The device is a 512Mx8bit with spare 16Mx8bit capacity (or 256Mx16bit with spare 8Mx16bit capacity).

F59D4G81A Features

* Voltage Supply: 1.8V (1.7V ~ 1.95V)
* Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit - Data Register: (1K + 32) x 16bit
* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

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Datasheet Details

Part number: F59D4G81A
Manufacturer: Elite Semiconductor
File Size: 1.54 MB
Datasheet: F59D4G81A-EliteSemiconductor.pdf
Description: 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

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📌 All Tags

Gbit 512M 256M 1.8V NAND Flash Memory Elite Semiconductor

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