EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

EMBA5C10G Description

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3.

Datasheet Details

Part number: EMBA5C10G
Manufacturer: Excelliance MOS
File Size: 210.31 KB
Datasheet: EMBA5C10G-ExcellianceMOS.pdf
Description: N & P-Channel Logic Level Enhancement Mode Field Effect Transistor

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Excelliance MOS EMBA5C10G-like datasheet