FDMS86263P Datasheet - Fairchild Semiconductor

FDMS86263P MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications * Active Clamp Switch * Load Switch.

FDMS86263P Features

* Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A

* Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A

* Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg

* This product is optimised for fast switching applications as well as load switch appli

FDMS86263P-FairchildSemiconductor.pdf