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FDMS86263P

MOSFET

FDMS86263P Features

* Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A

* Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A

* Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg

* This product is optimised for fast switching applications as well as load switch appli

FDMS86263P General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications

* Active Clamp Switch

* Load Switch.

FDMS86263P Datasheet (310.18 KB)

Preview of FDMS86263P PDF

Datasheet Details

Part number:

FDMS86263P

Manufacturer:

Fairchild Semiconductor

File Size:

310.18 KB

Description:

Mosfet.

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FDMS86263P MOSFET Fairchild Semiconductor

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