Datasheet Details
| Part number | FDMS86250 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 371.74 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86250_FairchildSemiconductor.pdf
|
| Part number | FDMS86250 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 371.74 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS86250_FairchildSemiconductor.pdf
|
Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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