FDS8858CZ - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FDS8858CZ
Manufacturer: Fairchild Semiconductor
File Size: 293.50 KB
Datasheet: FDS8858CZ-FairchildSemiconductor.pdf
Description: MOSFET

FDS8858CZ Product details

Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter Synchronous Buck SO-8 D2 D2 D1 D1 Pin 1 G2

Features

Q1: N-Channel.
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A.
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel.
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A.
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A.
High power and handing capability in a widely used surface mount package.
Fast switching speed General.

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MOSFET Fairchild Semiconductor

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