MRF6S18060NR1, MRF6S18060NBR1 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S18060NR1 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE .

MRF6S18060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* N Suffix Indicates Lead - Free

MRF6S18060NR1 Applications

* with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application
* Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain
* 15 dB Drain Efficiency - 50% GSM EDGE Application
* T

📥 Download Datasheet

MRF6S18060NR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S18060NR1, MRF6S18060NBR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S18060NR1, MRF6S18060NBR1
Manufacturer: Freescale Semiconductor
File Size: 837.87 KB
Datasheet: MRF6S18060NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S18060NR1, MRF6S18060NBR1.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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