MRF6S21050LSR3, MRF6S21050LR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S21050LSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data MRF6S21050L Rev.0, 3/2005 RF Power Field Effect Transistors N - Channel Enhancement - .
Bead, Surface Mount 6.

MRF6S21050LSR3 Features

* dc, IDQ = 450 mA, f1 = 2135 MHz f2 = 2145 MHz, 2 x W
* CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3
* 25
* 30 RF Device Data Freescale Semiconductor DataSheet 4 U . com www. DataSheet4U. com TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOU

MRF6S21050LSR3 Applications

* with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, P

📥 Download Datasheet

MRF6S21050LSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S21050LSR3, MRF6S21050LR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S21050LSR3, MRF6S21050LR3
Manufacturer: Freescale Semiconductor
File Size: 582.26 KB
Datasheet: MRF6S21050LR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S21050LSR3, MRF6S21050LR3.
Please refer to the document for exact specifications by model.

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