MRF8S18120HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF8S18120HR3 Datasheet Preview — Preview of MRF8S18120HR3 PDF

Datasheet Details

Part number	MRF8S18120HR3
Manufacturer	Freescale Semiconductor
File Size	323.53 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S18120HR3_FreescaleSemiconductor.pdf

MRF8S18120HR3 Product details

Description

12 pF Chip Capacitors 9.1 pF Chip Capacitors 10 nF Chip Capacitor 8.2 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitors 47 μF, 16 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitor 10 Ω, 1/4 W Chip Resistor 4.75 Ω, 1/4 W Chip Resistor 0.030″, εr = 2.55 Part Number ATC100B120JT500XT ATC100B9R1CT500XT C1825C103K1GAC - TU ATC100B8R2CT500XT C3225X7R2A225KT T491D476K016AT GRM55DR61H106KA88L MCRH63V337M13X21 - RH CRCW120610R0JNEA CRCW12064R75FNEA 250GX - 0300 - 55 - 22

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Optimized for Doherty.

📁 MRF8S18120HR3 Similar Datasheet

MRF8S21140HR3 - RF Power Field Effect Transistors (NXP)
MRF8S21140HSR3 - RF Power Field Effect Transistors (NXP)
MRF8S26060HR3 - RF Power Field Effect Transistors (Motorola Semiconductor)
MRF8S26060HSR3 - RF Power Field Effect Transistors (Motorola Semiconductor)
MRF8S26120HR3 - RF Power Field Effect Transistor (Motorola)
MRF8S26120HSR3 - RF Power Field Effect Transistor (Motorola)
MRF8S7120NR3 - RF Power Field Effect Transistor (Motorola)
MRF8S9200NR3 - RF Power Field Effect Transistor (NXP)

Other Datasheets by Freescale Semiconductor

MRF8S18120HSR3 - RF Power Field Effect Transistors
MRF8S18210WGHSR3 - RF Power Field Effect Transistors
MRF8S18210WHSR3 - RF Power Field Effect Transistors
MRF8S18260HR6 - RF Power Field Effect Transistors
MRF8S18260HSR6 - RF Power Field Effect Transistors
MRF8S19140HR3 - RF Power Field Effect Transistors

Published: Feb 9, 2010 |