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MRFG35005NT1, MRFG35005MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35005NT1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev.2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effec.
7.

MRFG35005NT1 Features

* 99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.3

MRFG35005NT1 Applications

* with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
* Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRFG35005NT1, MRFG35005MT1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRFG35005NT1, MRFG35005MT1
Manufacturer
Freescale Semiconductor
File Size
149.75 KB
Datasheet
MRFG35005MT1_FreescaleSemiconductor.pdf
Description
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: MRFG35005NT1, MRFG35005MT1.
Please refer to the document for exact specifications by model.

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Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MRFG35005NT1-like datasheet