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MRFG35010AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35010AR1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev.1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect .
6.

MRFG35010AR1 Features

* VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75

MRFG35010AR1 Applications

* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg. , f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d

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Datasheet Details

Part number
MRFG35010AR1
Manufacturer
Freescale Semiconductor
File Size
445.79 KB
Datasheet
MRFG35010AR1_FreescaleSemiconductor.pdf
Description
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor
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