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MRFG35020AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35020AR1 Description

Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev.0, 1/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect T.
3.

MRFG35020AR1 Features

* Supports up to 28 MHz Bandwidth OFDM Signals
* Internally Input Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Excellent Thermal Stability
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

MRFG35020AR1 Applications

* that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications.
* Typical WiMAX Performance: VDD = 12 Volts, IDQ = 300 mA, Pout = 2 Watts Avg. , f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz

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Datasheet Details

Part number
MRFG35020AR1
Manufacturer
Freescale Semiconductor
File Size
488.93 KB
Datasheet
MRFG35020AR1_FreescaleSemiconductor.pdf
Description
Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Gallium Arsenide PHEMT Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MRFG35020AR1-like datasheet