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IXFR15N80Q HiPerFET Power MOSFET

IXFR15N80Q Description

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mo.

IXFR15N80Q Features

* D = Drain
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

IXFR15N80Q Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.60 V V nA mA mA W Advantages
* Easy assembly
* Space savings
* High power density
* DC-DC converters
* Battery char

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Datasheet Details

Part number
IXFR15N80Q
Manufacturer
IXYS Corporation
File Size
61.91 KB
Datasheet
IXFR15N80Q_IXYSCorporation.pdf
Description
HiPerFET Power MOSFET

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