Datasheet4U Logo Datasheet4U.com

RD06HHF1 Silicon RF Power MOS FET

RD06HHF1 Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power .
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD06HHF1 Applications

* OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4

📥 Download Datasheet

Preview of RD06HHF1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
RD06HHF1
Manufacturer
Mitsubishi Electric
File Size
571.80 KB
Datasheet
RD06HHF1_MitsubishiElectric.pdf
Description
Silicon RF Power MOS FET

📁 Related Datasheet

  • RD06HVF1 - MOS FET type transistor specifically designed for VHF RF power amplifiers applications (Mitsubishi Electric Semiconductor)
  • RD0605-D - Solid State Relays (CARLO GAVAZZI)
  • RD0106T - High-Speed Switching Diode (Sanyo Semicon Device)
  • RD01MUS2B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
  • RD02LUS2 - Silicon RF Power MOS FET (Mitsubishi)
  • RD02MUS1B - Silicon MOSFET Power Transistor (Mitsubishi Electric Semiconductor)
  • RD030100 - Tubular Capacitors (Vishay Siliconix)
  • RD045120 - Tubular Capacitors (Vishay Siliconix)

📌 All Tags

Silicon Power MOS FET Mitsubishi Electric
Mitsubishi Electric RD06HHF1-like datasheet