FDMC86260ET150 Datasheet - ON Semiconductor

FDMC86260ET150 N-Channel MOSFET

FDMC86260ET150 Features

* Extended TJ Rating to 175°C

* Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A

* Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A

* High Performance Technology for Extremely Low RDS(on)

* 100% UIL Tested

* Pb

* Free, Halide Free and RoHS Compliant App

Datasheet Details

FDMC86260ET150

543.42 KB

N-channel mosfet.

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