STS2309 Datasheet - SamHop Microelectronics

STS2309 P-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2309 Nov 22, 2004 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.3A R DS (ON) S uper high dense cell design for low R DS (ON ). 130 @ V G S = -4.5V 190@ V G S = -2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuousa @.

STS2309 Datasheet (634.50 KB)

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Datasheet Details

Part number:

STS2309

Manufacturer:

SamHop Microelectronics

File Size:

634.50 KB

Description:

P-channel enhancement mode field effect transistor.

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STS2309 P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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