SSM6J23FE Datasheet (Toshiba Semiconductor)

SSM6J23FE, Silicon P-Channel MOSFET

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J23FE High Current Switching Applications DC-DC Converter Unit: mm Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V Drain current DC ID -1.2 A