SSM6J25FE Datasheet (Toshiba Semiconductor)

SSM6J25FE, Silicon P-Channel MOSFET

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 260mΩ (max) (@VGS = -4 V) Ron = 430mΩ (max) (@VGS = -2.5 V) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 1.6±0.05 1.0±0.05 0.5 0.5 Absolute Maximum Ratings (Ta = 25°C) 1 6 Characteristics Drain-Source voltage Symbol VDS Rating Unit -20 V 2 5 3 4 0.12±0.05 0.55±0.05 Ga