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2SB1015 - Silicon PNP Transistor

2SB1015 Description

: SILICON PNP TRIPLE DIFFUSED TYPE 1 2SB1015 AUDIO FREQUENCY POWER AMPLIFIE R APPLICATIONS.10.3MAX.Unit in mm .

2SB1015 Features

* . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max. ) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO

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Silicon PNP Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SB1015-like datasheet