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GT50J102 silicon N-channel IGBT

GT50J102 Description

GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

GT50J102 Applications

* MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30μs (Max. ) z Low saturation voltage. : VCE(sat) = 2.7V (Max. ) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector
* Emitter Voltage Gate

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silicon N-channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT50J102-like datasheet