* Very low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
PBSS4032PX Datasheet (705.31 KB)
PBSS4032PX
705.31 KB
Pnp transistor.
PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General descriptio.
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