* Low collector-emitter saturation voltage VCEsat
* Optimized switching time
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit
PBSS4032SN Datasheet (767.33 KB)
PBSS4032SN
767.33 KB
Npn/npn transistor.
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 2
* 13 October 2010
Product data sheet
1. Product profile
1.1 General de.
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